| 技術模組 |
設備名稱 |
規格 |
| 黃光 |
光阻塗佈機 / Hot Plate
Spin Coater/Hot Plate |
Wafer Sizes: 4”, 5”, 6”
Maximum Spin Speed: 6000 rpmRoom
Temperature ~ 200 oC |
| 黃光 |
低能量曝光機350W
Mask Aligner |
350 W Hg Lamp
Resolution 2m
Double Side Alignment |
| 黃光 |
噴霧顯影機 Spray Developer |
Wafer Sizes: 4”, 5”, 6”
Fixed Nozzles
Maximum Spin Speed: 3000 rpm |
| 黃光 |
全自動塗佈顯影機
Automatic Cassette-to-Cassette Coater &
Developer |
Cassette Input/OutputCoater,
Developer,
Hot Plates, Chill Plates, Robot |
| 黃光 |
厚膜光阻塗佈機 Thick Photo-resist Coater |
Wafer Size: 4”
Maximum Spin Speed (Close): 3000 rpm
Maximum Spin Speed (Open): 1000 rpm |
| 黃光 |
高能量曝光機 1000W Mask Aligner |
1000 W Hg Lamp
Thick PR Exposure
Double Side Alignment |
| 黃光 |
掃描式噴霧顯影機 Scanning Spray Developer |
Wafer Sizes: 4”, 5”, 6”
Scanning Nozzles
Maximum Spin Speed: 3000 rpm |
| 黃光 |
噴霧蝕刻機 Spray Etcher |
Wafer Sizes: 5", 6", 7"
Aluminum Etching
3500 rpm |
| 黃光 |
紅外線烤箱 IR Oven |
Topside Baking , Backside BakingRoom
Temperature ~ 350oC
9 Steps of Temperature and Time |
| 黃光 |
烤箱Oven |
Overall BakingRoom Temperature ~
350 oC |
| 黃光 |
乾式去光阻機 Dry Photo-resist Stripper
倍強 |
O2 Plasma |
| 黃光 |
CD量測系統 CD Measurement System |
3 mm CD |
| 光罩製造 |
Laser Writer |
適用尺寸:5"光罩 |
| 濕蝕刻 |
SiO2 / Al Etching Bench |
適用尺寸:4",5", 6" |
| 濕蝕刻 |
H2SO4 PR Stripping Bench |
適用尺寸:4",5", 6" |
| 濕蝕刻 |
KOH Bench |
適用尺寸:4",5", 6" |
| 濕蝕刻 |
Spin Dryer |
適用尺寸:4",5", 6" |
| 濕蝕刻 |
RCA Clean Bench |
適用尺寸: 4",5"NH4OH Tank ,
HCl Tank ,
H2SO4 TankHF Tank |
| 乾蝕刻 |
反應式離子蝕刻機 Reactive Ion Etcher (RIE) |
適用尺寸範圍:4~6" |
| 乾蝕刻 |
感應式電耦電漿機 Inductive Couple
Plasma (ICP) |
適用尺寸範圍:4~6" |
| 乾蝕刻 |
介電層深蝕刻機 Deep RIE |
適用尺寸範圍:4~6" |
| 乾蝕刻 |
電漿輔助化學氣相沉積機 PECVD |
適用尺寸範圍:4~6" |
| 乾蝕刻 |
高速電漿輔助化學氣相沉積機 High Rate
PECVD |
適用尺寸範圍:4~6" |
| 乾蝕刻 |
氟化氙蝕刻機 XeF2 Etcher |
適用尺寸範圍:4~6" |
| 鍍膜 |
濺鍍機 Sputter |
Al、Cr、Au、Ti、Pt等金屬及金屬氧化物薄
膜濺鍍 |
| 鍍膜 |
濺鍍機 Reactive Sputter |
Al、Cr、Au、Ti、Pt等金屬及金屬氧化物薄
膜濺鍍 |
| 鍍膜 |
濺鍍機 Multi Wafer Sputter |
Al、Cr、Au、Ti、Pt等金屬及金屬氧化物薄
膜濺鍍 |
| 鍍膜 |
電子槍蒸鍍機E-Gun Evaporator |
Al、Cr、Au、Ti、Pt等蒸鍍 |
| 爐管 |
大氣壓力化學氣相沉積機 APCVD-1 |
適用尺寸範圍:4~6" Dope-BBr3 |
| 爐管 |
大氣壓力化學氣相沉積機 APCVD-2 |
適用尺寸範圍:4~6" Thermal Oxide |
| 爐管 |
大氣壓力化學氣相沉積機 APCVD-3 |
適用尺寸範圍:4~6" Anneal(350~1100℃) |
| 爐管 |
低壓力化學氣相沉積機 LPCVD-1 |
適用尺寸範圍:4~6"Low Stress Nitride |
| 爐管 |
低壓力化學氣相沉積機 LPCVD-2 |
適用尺寸範圍:4~6"Poly-Si : In situ
Phosphor Doped |
| 爐管 |
低壓力化學氣相沉積機 LPCVD-3 |
適用尺寸範圍:4~6"Low Temperature
Oxide, PSG |
| 爐管 |
Rapid Thermal Anneal |
適用尺寸範圍: 4~6"Anneal(650~1150℃) |
| 量測 |
掃瞄式電子顯微鏡 Scanner Electron
Microscope |
Image resolution: 3nm
Magnification :25x~10kx
Specimen size : φ125 mm |
| 量測 |
表面模厚量測儀 Nanospec |
UV light(thin film range): 25A~500A
Visible light (thick film range): 500~200KA Specimen
size : 100/150mm
or150/200mm wafer |
| 量測 |
橢圓測厚儀 Ellipsometer |
Wavelength :632.8nm
Angle of incidence:70°
Thickness range: 1~2000nm
Accuracy of refractive index ~0.0005 |
| 量測 |
四點探針 4-Point Probe |
Measurement range :5mΩ/口~5MΩ/口
Specimen size :4"~8" |
| 量測 |
菱鏡耦合儀Prism Couple |
Thickness range: 1~15um
Index accuracy : 0.01
Index resolution: 0.0005 |
| 量測 |
膜厚測量儀α-Step |
Scan length :10mm
Horizontal Resolution : 0.01um(At 2 um/s)
Step height repeatability :300um |
| 量測 |
雷射都普勤干涉儀Micro Scanning Vibrometer |
Wavelength :632.8nm
Maximum Frequency :1.3MHz
Displacement : 10nm~5mm |
| 量測 |
應力分析儀Thin Film Stress Measurement |
Specimen size :4"~8"
Resolution :0.00003/m
Temp. Range < 500°C |
| 量測 |
非接觸表面量測儀Laser Surface Profile
Scan |
Measurement spot <1.5um
Steproughness: 25nm
W ork piece height :1.5mm |
| 量測 |
探針台Probe Station |
Travel speed :0.45”/sec
Accuracy of positioning better than 3um Stage
resolution :0.1um |
| 晶片切割 |
晶片切割機 Wafer Dicing Saw |
4"~6" Si、Glass wafer
Scribe line≒100um (For Si ) |